ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,165, issued on April 21, was assigned to INSTITUT MINES TELECOM (Palaiseau, France).
"Method for detecting an error in an electronic memory" was invented by Jean-Max Dutertre (Aix-en-Provence, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for detecting at least one fault caused by a photoelectric or radiative effect in a non-volatile semiconductor memory, the memory including a plurality of memory cells (CM) containing MOS transistors, potentially floating-gate MOS transistors, each memory cell being located at the intersection of an elementary bit line (BLE) and of a word line (WL), the binary content of a memory cell being read o...