US Patent Issued to Yangtze Memory Technologies on April 21 for "Memory, methods of operating memory, systems and storage mediums" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,167, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory, methods of operating memory, systems and storage mediums" was invented by Yan Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application provides a memory including a peripheral circuit and a memory cell array. The peripheral circuit includes a page buffer including a first bit line connection point, a second bit line connection point, a first switching component and a second switching component. The first bit line connection point and the second bit line connection point are connected to a power terminal via independent pr...