US Patent Issued to ZINITE on June 30 for "Thin-film transistors with gate-source capacitance tuning" (Canadian Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,308, issued on June 30, was assigned to ZINITE Corp. (Edmonton, Canada).

"Thin-film transistors with gate-source capacitance tuning" was invented by Douglas W. Barlage (Edmonton, Canada), Viraj Bhingardive (Edmonton, Canada), Korel Dawkins (Edmonton, Canada), Alex Ma (Edmonton, Canada), Eric Wilson Milburn (Edmonton, Canada) and Lhing Gem Shoute (Edmonton, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example thin-film transistor includes a source and a gate. The source includes a body of source metal and a body of capacitance-tuning material disposed on the body of source metal. The body of capacitance-tuning material is configured to co...