US Patent Issued to ZINITE on June 30 for "Thin-film transistors having a metal nitride source material and related methods" (Canadian Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,315, issued on June 30, was assigned to ZINITE Corp. (Edmonton, Canada).

"Thin-film transistors having a metal nitride source material and related methods" was invented by Douglas Barlage (Edmonton, Canada), Alex Ma (Edmonton, Canada) and Gem Shoute (Edmonton, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the ...