US Patent Issued to Zhuhai Chuangfeixin Technology on April 7 for "Memory storage device and method of manufacturing the same" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,755, issued on April 7, was assigned to Zhuhai Chuangfeixin Technology Co. Ltd. (Zhuhai, China).

"Memory storage device and method of manufacturing the same" was invented by Li Li (Fremont, Calif.) and Zhigang Wang (Femont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device for storing electron charges includes a substrate, a tunnel oxide layer formed on the substrate, a silicon-rich nitride layer comprising silicon nitride on the tunnel oxide layer, and a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide. The electron traps in the modulated interface ...