US Patent Issued to Yangtze Memory Technologies on Sept. 8 for "Program operations in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,644, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Program operations in memory devices" was invented by Hongtao Liu (Wuhan, China), Pengyu Xu (Wuhan, China), Ying Huang (Wuhan, China) and Lei Guan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example memory devices, systems, and methods for reducing program disturbance in memory devices are disclosed. One example method includes during an n-th loop of a program operation performed on a first memory cell in a memory cell array, applying a first voltage to a first bit line coupled to a second memory cell in the memory cell array, where the fir...