US Patent Issued to Yangtze Memory Technologies on Sept. 8 for "Method and system for adjustable top select gate control" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,643, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method and system for adjustable top select gate control" was invented by Jianquan Jia (Wuhan, China), Lei Liu (Wuhan, China), Lei Jin (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a memory string, a coarse top select gate (TSG) line configured to couple a coarse threshold voltage (Vth_coarse) for programming the memory string, a word line configured to program the memory string, a buffer TSG line configured to couple a buffer thresho...