US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Memory devices, methods for operating memory devices and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,319, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices, methods for operating memory devices and memory systems" was invented by Kaikai You (Hubei, China), Lei Jin (Hubei, China), XiangNan Zhao (Hubei, China), Lei Guan (Hubei, China) and Ying Huang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device, a method for operating a memory device, and a memory system. The memory device includes a memory array and a peripheral circuit coupled to the memory array, the memory array includes a memory block, and the memory block is coupled to the per...