US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,176, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories" was invented by SiPing Hu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a three-dimensional memory device and a manufacturing method thereof, and a three-dimensional memory. The three-dimensional memory device includes a first memory cell and at least one second memory cell sequentially stacked on the first memory cell. Each memory cell includes a first set of contacts, and a memory array device and a CMOS device ...