US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory devices and operating methods thereof, memory systems, and sensing circuits" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,649, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices and operating methods thereof, memory systems, and sensing circuits" was invented by Chuyan Hu (Wuhan, China), HuangPeng Zhang (Wuhan, China), Jinze Song (Wuhan, China), Xuesong Shen (Wuhan, China) and Debo Wei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application provide a memory device and operating method thereof, a memory system, and a sensing circuit. Wherein the memory device includes: an array of memory cells; a first sensing circuit coupled to the array of memory cells through a first pair of...