US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 1 for "Memory device, memory system, memory controller, and operation method" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,668, issued on Sept. 1, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, memory controller, and operation method" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China) and Lu Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application disclose a memory device. The memory device includes: a memory cell array comprising memory cells that store a plurality of memory bits, the plurality of memory bits corresponding to a plurality of orders of read voltages, and a preset number of the memory cells forming a code word; and a peripheral circuit c...