US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Forming connect structures in memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,144, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Forming connect structures in memory systems" was invented by Hao Zhang (Wuhan, China), Fandong Liu (Wuhan, China), Si Qiao (Wuhan, China), Yanhong Wang (Wuhan, China), Xiao Ding (Wuhan, China), Wei Liu (Wuhan, China) and Wenyu Hua (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example three-dimensional (3D) memory devices, methods, and memory systems for connecting vertical transistors and capacitors using connect structures are disclosed. One example method includes forming a first structure that includes multiple vertical transistors. A con...