US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "3D NAND memory device with cross-stacking structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,161, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"3D NAND memory device with cross-stacking structure" was invented by Jin Yong Oh (Wuhan, China) and Youn Cheul Kim (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first substrate, a second substrate, a first connection structure, and a second connection structure. A transistor is formed in a first side of the first substrate. A doped region is formed in a first side of the second substrate. The first connection structure is formed over a second side of the second substrate, and coupled to the doped region throu...