US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 6 for "Memory and fabrication method thereof and memory system" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,722, issued on Oct. 6, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory and fabrication method thereof and memory system" was invented by Zhaoyun Tang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a memory device, a method for fabricating a memory device, and a memory system. The method includes: forming a plurality of semiconductor bodies spaced apart and forming spacing portions between adjacent semiconductor bodies, where the plurality of semiconductor bodies extend along a first direction; removing part of the plurality of semiconductor bodies to form a plurality of first...