US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Memory device and operating method thereof, memory system" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,386, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and operating method thereof, memory system" was invented by Chong Jin (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application provide a memory device and operating method thereof and a memory system. Wherein the memory device includes: a first memory bank and a second memory bank; a redundancy analysis circuit includes: a redundancy circuit which stores invalid address information for the first memory bank and the second memory bank; and is configured to output an invalid address signal, the invalid ad...