US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Memory device and operating method thereof, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,375, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and operating method thereof, and memory system" was invented by Xinran Li (Wuhan, China), Feng Xu (Wuhan, China), Ya Wang (Wuhan, China), Kaikai You (Wuhan, China), Da Li (Wuhan, China) and Lei Jin (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides memory devices, operating methods, and memory systems. An example memory device includes: a first, second, and third top select line, multiple word lines, multiple memory cells, and a peripheral circuit configured to: in a process of programming the multip...