US Patent Issued to Yangtze Memory Technologies on Nov. 3 for "Memories and fabrication methods thereof, memory systems, and electronic devices" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,779, issued on Nov. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memories and fabrication methods thereof, memory systems, and electronic devices" was invented by Hao Zheng (Wuhan, China), Dongyu Fan (Wuhan, China), Lei Liu (Wuhan, China), ZhiLiang Xia (Wuhan, China) and ZhongLiang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure disclose a memory and a fabrication method thereof, a memory system, and an electronic device. The memory includes a first semiconductor structure and a second semiconductor structure that are bonded to each other; the first semiconductor structur...