US Patent Issued to Yangtze Memory Technologies on Nov. 3 for "Managing vertical structures in three-dimensional semiconductive devices" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,265, issued on Nov. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Managing vertical structures in three-dimensional semiconductive devices" was invented by Chao Sun (Wuhan, China), Ning Jiang (Wuhan, China) and Wei Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, devices, and methods for managing vertical structures in three-dimensional (3D) semiconductor devices are provided. In one aspect, a semiconductor device includes two adjacent memory cells and a conductive structure between the two adjacent memory cells. Each of the two adjacent memory cells includes a transistor having a semiconductor body...