US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 5 for "Memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,987, issued on May 5, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices and methods for forming the same" was invented by Wei Liu (Wuhan, China), Hongbin Zhu (Wuhan, China) and Wenyu Hua (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell and a peripheral circuit. The memory cell includes a vertical transistor having a first terminal and a second terminal, a storage unit having a first end coupled to the first terminal of the vertical transistor, and a bit line coupled to the second terminal of the vertical transistor. The peripheral circuit is coupled to the bit line. ...