US Patent Issued to Yangtze Memory Technologies on May 5 for "Managing program disturb in memory devices" (Chinese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,442, issued on May 5, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Managing program disturb in memory devices" was invented by Zihao Deng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example apparatus and methods for managing program disturb in flash memory are disclosed. In one example, a memory device can include a memory string including a first select gate transistor, a second select gate transistor, and memory cells positioned in between. A peripheral circuit is configured to apply, during a program operation of a first memory cell, a first voltage to the first select gate transistor. The first memory cell...