US Patent Issued to Yangtze Memory Technologies on May 26 for "Three-dimensional NAND memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,789, issued on May 26, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional NAND memory device and method of forming the same" was invented by Beibei Li (Wuhan, China), SiMin Liu (Wuhan, China), Wei Xu (Wuhan, China), Bin Yuan (Wuhan, China), Bo Xu (Wuhan, China), Yali Guo (Wuhan, China), Zongke Xu (Wuhan, China), Jiajia Wu (Wuhan, China), ZongLiang Huo (Wuhan, China) and Lei Xue (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes decks stacked over a semiconductor layer in a vertical direction. Each deck includes alternating word line layers and insulating layers. A gate lin...