US Patent Issued to Yangtze Memory Technologies on May 26 for "Three-dimensional NAND memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,781, issued on May 26, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional NAND memory device and method of forming the same" was invented by He Chen (Wuhan, China) and Liang Xiao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a base layer having a first side for forming memory cells and a second side that is opposite to the first side. The semiconductor device includes a stack of alternating word line layers and insulating layers that is positioned over the first side of the base layer, where the stack includes a first region and a...