US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 26 for "Memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,784, issued on May 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices and methods for forming the same" was invented by Kun Zhang (Wuhan, China), Yuancheng Yang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China), Dongxue Zhao (Wuhan, China), Tao Yang (Wuhan, China), Lei Liu (Wuhan, China), Di Wang (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells disposed on a first side of a first semiconductor layer, and a pad-out structure disposed on the array of memory cells. Each of the memory cells includes a s...