US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 26 for "Memory device and system, and decoding circuit" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,186, issued on May 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and system, and decoding circuit" was invented by Xuesong Shen (Wuhan, China), Zhichao Du (Wuhan, China) and Daesik Song (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device and system, and a decoding circuit. The memory device includes a memory cell array and a peripheral circuit coupled with the memory cell array; the memory cell array includes at least one block, and the block is provided with multiple rows of word lines, multiple columns of bit lines, and memory cells coupled between th...