US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 26 for "Memory device and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,639,002, issued on May 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and operation method thereof" was invented by Ke Ke (Wuhan, China), Chenhui Li (Wuhan, China), Zhipeng Dong (Wuhan, China), Xiangnan Zhao (Wuhan, China) and Hongtao Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes memory cells and a peripheral circuit coupled to the memory cells. The memory cells include a first memory cell coupled to a first word line, a second memory cell coupled to a second word line, and a target memory cell coupled to a third word line adjacent to the first and se...