US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 19 for "Three-dimensional memory and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,137, issued on May 19, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory and fabrication method thereof" was invented by Linchun Wu (Wuhan, China) and Kun Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a three-dimensional memory includes forming a first stack substrate on a substrate. The method also includes forming bottom select gate cuts through the first stack structure, and forming first sacrificial layers within the bottom select gate cuts. The method further includes forming a second stack structure covering the first sacrificial layers and the first stac...