US Patent Issued to Yangtze Memory Technologies on May 19 for "Memory device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,134, issued on May 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and fabrication method thereof" was invented by Lina Miao (Wuhan, China), Liang Xiao (Wuhan, China), Yi Zhao (Wuhan, China) and Shu Wu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device fabrication method includes providing a processing wafer. The processing wafer has core and staircase structure (SS) regions, and includes a bottom conductor layer, conductor/dielectric tier(s) over the bottom conductor layer, and a channel hole (CH) in the core region and extending approximately vertically through the conductor/d...