US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 31 for "Memory programming method, memory device, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,591,363, issued on March 31, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory programming method, memory device, and memory system" was invented by Yifan Li (Wuhan, China), Yao Chen (Wuhan, China) and Zhiliang Xia (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory programming method, a memory device and a memory system. The memory device comprises a plurality of memory cells. The method comprises: performing a first incremental step pulse programming on the memory cells; performing a first programmed state verification on the memory cells; and performing a second incremental...