US Patent Issued to Yangtze Memory Technologies on March 31 for "Control gate structures in three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,445, issued on March 31, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Control gate structures in three-dimensional memory devices and methods for forming the same" was invented by Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a three-dimensional memory device can include forming a staircase structure. An alternating layer stack is disposed and etched to form steps. A continuous layer disposed on the staircase structure continuously extends over the steps. An insulating layer is disposed on t...