US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 24 for "Semiconductor device and fabrication method thereof, memory, and memory system" (Chinese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,202, issued on March 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device and fabrication method thereof, memory, and memory system" was invented by Yonggang Yang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes providing a stack including interlayer sacrifice layers and interlayer insulation layers stacked alternatively. The stack includes a core region and a periphery region distributed along a first direction. The method also includes forming a gate line slit penetrating the stack and extending along the first direction. The gate line ...