US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 24 for "Memory device including sub-control circuit with asynchronous control logic" (Chinese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,620, issued on March 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device including sub-control circuit with asynchronous control logic" was invented by Yue Sheng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array configured to store data, and a peripheral circuit coupled to the memory array and including a control logic circuit to control operations of the peripheral circuit. The control logic circuit includes a main control circuit and at least one first sub control circuit, and the main control circuit and the first sub control circuit interact through a first t...