US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 24 for "Bonding alignment marks at bonding interface" (Chinese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,495, issued on March 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Bonding alignment marks at bonding interface" was invented by Meng Yan (Wuhan, China), Jia Wen Wang (Wuhan, China), Si Ping Hu (Wuhan, China) and Shun Hu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a bonded structure includes a first bonding layer including a first bonding contact and a first bonding alignment mark, a second bonding layer including a second bonding contact and a second bonding alignment mark, and a bonding interfac...