US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 17 for "Semiconductor device, fabrication method, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,649, issued on March 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device, fabrication method, and memory system" was invented by Zongliang Huo (Wuhan, China), Lei Xue (Wuhan, China), Wenbin Zhou (Wuhan, China), Wei Xu (Wuhan, China), Yanwei Shi (Wuhan, China), Zhengliang Xia (Wuhan, China), Han Yang (Wuhan, China), Xinwei Zou (Wuhan, China), Zhaohui Tang (Wuhan, China), Jiaji Wu (Wuhan, China) and Cheng Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a base and a stack structure. The base includes a first surface defining at least one memory plane region. T...