US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 23 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,953, issued on June 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Di Wang (Wuhan, China), Wenxi Zhou (Wuhan, China) and Zhong Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a stack structure, and a slit structure extending. The stack structure includes interleaved conductive layers and dielectric layers. Edges of the interleaved conductive layers and dielectric layers define a staircase structure. Each one of the conductive layers has a thickened portion...