US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 23 for "Memory devices having vertical transistors and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,597, issued on June 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices having vertical transistors and fabricating methods thereof" was invented by He Chen (Wuhan, China), Ziqun Hua (Wuhan, China), Yanhong Wang (Wuhan, China) and Wei Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device and a fabricating method thereof are disclosed. The 3D memory device can comprise an array of memory cells. Each memory cell can comprise a capacitor and a vertical transistor. The vertical transistor can comprise a semiconductor body extending in a vertical direction and in conta...