US Patent Issued to Yangtze Memory Technologies on June 16 for "Method and device for detecting word line shorts in memory device" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,657,688, issued on June 16, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method and device for detecting word line shorts in memory device" was invented by Wenqi Wang (Wuhan, China), Wenlong Li (Wuhan, China), Ban Wang (Wuhan, China), Jinxing Chen (Wuhan, China), Yanli Wang (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for detecting word line shorts in a memory device includes: determining a region of interest (ROI) region in a bright voltage contrast (BVC) image for contact through-holes (CTs) of word lines in the memory device, the CTs comprising first CTs in at least on...