US Patent Issued to Yangtze Memory Technologies on July 7 for "Three dimensional (3D) memory device and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,417, issued on July 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three dimensional (3D) memory device and fabrication method" was invented by Yi Yang (Wuhan, China), Tingting Gao (Wuhan, China), Xiaoxin Liu (Wuhan, China), Wei Yuan (Wuhan, China), Xiaolong Du (Wuhan, China), Changzhi Sun (Wuhan, China), Zhihao Song (Wuhan, China), Shan Li (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a 3D memory device includes forming a sacrificial layer over a substrate, forming a first dielectric stack over the sacrificial layer, formin...