US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 7 for "Memory device, memory system, memory controller and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,396, issued on July 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, memory controller and operating method thereof" was invented by Xingwei Tang (Wuhan, China) and Guangchang Ye (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application provide a memory device, memory system, memory controller and operating method thereof, wherein the memory device includes: an array of memory cells, including multiple memory cells, and a preset number of memory cells forming one code word; peripheral circuit coupled to the array of memory cells and configured to: generate a ...