US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 21 for "Verify failbit count circuit, memory device, memory system and method" (Chinese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,972, issued on July 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Verify failbit count circuit, memory device, memory system and method" was invented by Yi Cao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array and a count circuit coupled to the memory array. The count circuit includes a verify standard selector configured to output a verify standard signal, a bit counter circuit coupled to the verify standard selector and configured to receive the verify standard signal and output at least one comparison result, and a code converter coupled to the bit counter circuit."

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