US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 21 for "Three-dimensional memory devices, systems, and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,462, issued on July 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices, systems, and methods for forming the same" was invented by Jingtao Xie (Wuhan, China), Bingjie Yan (Wuhan, China), Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes conductive layers and dielectric layers stacked alternatingly, and the stack ...