US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 14 for "Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,773, issued on July 14, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same" was invented by Zhen Guo (Wuhan, China), Jingjing Geng (Wuhan, China), Bin Yuan (Wuhan, China), Jiajia Wu (Wuhan, China), Xiangning Wang (Wuhan, China), Zhu Yang (Wuhan, China) and Chen Zuo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional (3D) memory devices are disclosed. In an example, a 3D memory device includes a semiconductor layer, a memory stack over the semiconductor layer, first chann...