US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 14 for "Semiconductor device and method of forming thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,057, issued on July 14, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device and method of forming thereof" was invented by Qingyi Huang (Wuhan, China) and Lina Miao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device includes a body structure and an outer edge structure at a periphery of a bottom of the body structure. The body structure includes a top surface and a bottom surface arranged opposite to each other, and a side surface between the top surface and the outer edge structure. The s...