US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 17 for "Three-dimensional memory and fabrication method for the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,279, issued on Feb. 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory and fabrication method for the same" was invented by Tingting Gao (Hubei, China), Zhiliang Xia (Hubei, China), Xiaoxin Liu (Hubei, China), Changzhi Sun (Hubei, China) and Xiaolong Du (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a three-dimensional memory and a fabrication method for the same. The method includes forming a storage stack structure on a substrate and forming a storage channel structure that penetrates the storage stack structure, forming a selection stack structure stack...