US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 17 for "Memory device with failed main bank repair using redundant bank" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,554,415, issued on Feb. 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device with failed main bank repair using redundant bank" was invented by Sangoh Lim (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes an array of memory cells and an input/output (I/O) circuit. The array of memory cells includes N main banks and M redundant banks. Each of N and M is a positive integer, and N is greater than M. The I/O circuit includes a set of write multiplexers (MUXs) respectively coupled to the N main banks and M redundant banks. Each of the N main banks and M redundant banks...