US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,700, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Kun Zhang (Wuhan, China) and Wenxi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices and methods for forming the same are disclosed. In certain aspects, a memory device includes a filling layer; a stack structure including interleaved conductive layers and dielectric layers; a channel structure extending through the stack structure and the filling layer. The channel structure includes a memory film and a semiconductor channel. The memory device al...