US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,705, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems" was invented by Qi Hao (Wuhan, China), Wei Xu (Wuhan, China), Bin Yuan (Wuhan, China), Zongke Xu (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some examples, the semiconductor structures include a stack structure, a plurality of conductive structures and a first insulating layer. The stack structure may include a plurality of first dielectric layers and gate layers which are alternately disposed; the stac...