US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Semiconductor device, manufacturing method thereof, and 3D NAND memory" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,725, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor device, manufacturing method thereof, and 3D NAND memory" was invented by Lu Zhou (Wuhan, China), Quan Zhang (Wuhan, China) and Lan Yao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure provides a semiconductor device, a method of manufacturing the same, a 3D NAND memory, and a memory system. The semiconductor device includes a substrate having a first trench at a surface thereof, and a first insulating layer formed on the surface of the substrate and inside the first trench. The first insulating layer formed inside th...