US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Memory device structure and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,719, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device structure and fabrication method" was invented by Liang Chen (Wuhan, China), Wei Liu (Wuhan, China), Yongna Li (Wuhan, China) and Huaguo Sheng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory device includes a complementary metal-oxide-semiconductor (CMOS) structure having a page buffer region and a string driver region respectively corresponding to a cell region and a string region in an array structure, wherein the CMOS structure further includes a plurality of page buffers in a folded structure formed in the page buffe...