US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Memory device containing TSG deck with reduced wafer bow and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,707, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device containing TSG deck with reduced wafer bow and method of forming the same" was invented by Wenbo Zhang (Wuhan, China), Kai Yu (Wuhan, China), Zhiyong Lu (Wuhan, China), Sheng Peng (Wuhan, China), Zhaohui Cheng (Wuhan, China), Zhangyi Li (Wuhan, China), Jing Gao (Wuhan, China), Zongliang Huo (Wuhan, China) and Lei Xue (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory device, memory system, and formation method are provided. The formation method includes providing a dielectric-pair stack containing a channel layer extending there...