US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,868, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and fabricating methods thereof" was invented by Danyang Li (Wuhan, China), Yu Wang (Wuhan, China), Xu Hou (Wuhan, China) and Zhichao Du (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array structure having a plurality of memory banks, each memory bank including a plurality of memory groups, each memory group having at least one memory block; and a peripheral structure stacked with the memory array structure in a vertical direction, and having a plurality of memory-group-driver...